optocoupler, phototransistor output, with base connection www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83662 586 rev. 1.6, 10-dec-08 sfh600 vishay semiconductors description the sfh600 is an optocoupler with a gaas led emitter which is optically coupl ed with a silicon planar phototransistor detector. the component is packaged in a plastic plug-in case, 20 ab din 41866. the coupler transmits signals between two electrically isolated circuits. the potential difference between the circuits to be coupled should not exceed the maximum permissible insulating voltage. features ? isolation test voltage (1.0 s), 5300 v rms ?v cesat = 0.25 ( 0.4) v, i f = 10 ma, i c = 2.5 ma ? built to conform to vde requirements ? high quality premium device ? long term stability ? storage temperature, - 55 c to + 150 c ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 (vde 0884) available with option 1 ? csa 93751 ? bsi iec 60950; iec 60065 note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks sfh600-0 ctr 40 % to 80 %, dip-6 sfh600-1 ctr 63 % to 125 %, dip-6 sfh600-2 ctr 100 % to 200 %, dip-6 sfh600-3 ctr 160 % to 320 %, dip-6 sfh600-0x007 ctr 40 % to 80 %, smd-6 (option 7) sfh600-1x007 ctr 63 % to 125 %, smd-6 (option 7) sfh600-1x009 ctr 63 % to 125 %, smd-6 (option 9) sfh600-2x006 ctr 100 % to 200 %, dip-6 400 mil (option 6) sfh600-2x007 ctr 100 % to 200 %, smd-6 (option 7) SFH600-3X006 ctr 160 % to 320 %, dip-6 400 mil (option 6) sfh600-3x007 ctr 160 % to 320 %, smd-6 (option 7) absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t p 10 s i fsm 2.5 a total power dissipation p diss 100 mw output collector emitter voltage v ce 70 v emitter base voltage v eb 7.0 v collector current i c 50 ma t = 1.0 ms i c 100 ma power dissipation p diss 150 mw
document number: 83662 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 587 sfh600 optocoupler, phototransistor output, with base connection vishay semiconductors notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to reflow profile for soldering conditions for surface mo unted devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. coupler isolation test voltage between emitter and detector t = 1.0 s v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature max. 10 s, dip soldering t j 100 c soldering temperature (2) max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 a v br 6v reverse current v r = 6 v i r 0.01 10 a capacitance v f = 0 v, f = 1 mhz c o 25 pf thermal resistance r thja 750 k/w output collector emitter capacitance f = 1 mhz, v ce = 5 v c ce 5.2 pf collector base capacitance f = 1 mhz, v cb = 5 v c cb 6.5 pf emitter base capacitance f = 1 mhz, v eb = 5 v c eb 9.5 pf thermal resistance r thja 500 k/w collector emitter leakage current v ce = 10 v sfh600-0 i ceo 235na sfh600-1 i ceo 235na sfh600-2 i ceo 235na sfh600-3 i ceo 570na coupler saturation voltage collector emitter voltage i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v capacitance (input to output) c io 0.6 pf absolute maximum ratings (1) parameter test condition symbol value unit
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83662 588 rev. 1.6, 10-dec-08 sfh600 vishay semiconductors optocoupler, phototransistor output, with base connection current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f at v ce = 5.0 v i f = 10 ma sfh600-0 ctr 40 80 % sfh600-1 ctr 63 125 % sfh600-2 ctr 100 200 % sfh600-3 ctr 160 320 % i f = 1 ma sfh600-0 ctr 13 30 % sfh600-1 ctr 22 45 % sfh600-2 ctr 34 70 % sfh600-3 ctr 56 90 % switching characteristics parameter test condition part symbol min. typ. max. unit non-saturated current v cc = 5 v, r l = 75 i f 10 ma rise time v cc = 5 v, r l = 75 t r 2s fall time v cc = 5 v, r l = 75 t f 2.5 s turn-on time v cc = 5 v, r l = 75 t on 3.2 s turn-off time v cc = 5 v, r l = 75 t off 3s cut-off frequency v cc = 5 v, r l = 75 f co 250 khz saturated current sfh600-0 i f 20 ma sfh600-1 i f 10 ma sfh600-2 i f 10 ma sfh600-3 i f 5ma rise time sfh600-0 t r 2.5 s sfh600-1 t r 3s sfh600-2 t r 3s sfh600-3 t r 4s fall time sfh600-0 t f 11 s sfh600-1 t f 12 s sfh600-2 t f 12 s sfh600-3 t f 14 s turn-on time sfh600-0 t on 3.7 s sfh600-1 t on 4.5 s sfh600-2 t on 4.5 s sfh600-3 t on 5.8 s turn-off time sfh600-0 t off 19 s sfh600-1 t off 21 s sfh600-2 t off 21 s sfh600-3 t off 24 s
document number: 83662 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 589 sfh600 optocoupler, phototransistor output, with base connection vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - linear operation (without saturation) fig. 2 - switching operation (with saturation) fig. 3 - current transfe r ratio vs. diode current fig. 4 - current transfer ratio vs. diode current fig. 5 - current transfer ratio vs. diode current fig. 6 - current transfer ratio vs. diode current isfh600_01 r l = 75 v cc = 5 v i c 47 i f i f 1k v cc =5 v 47 isfh600_02 10 3 5 0 1 2 3 10 2 5 10 1 10 0 10 -1 10 1 10 0 55 5 isfh600_03 (t a = - 25 ?c, v ce = 5.0 v ) i c /i f = f (i f ) i f (ma) i c /i f ( % ) 10 3 5 0 1 2 3 10 2 5 10 1 10 0 10 -1 10 1 10 0 55 5 isfh600_04 (t a = 0 ?c, v ce = 5.0 v ) i c /i f = f (i f ) i c /i f ( % ) i f (ma) 10 3 5 0 1 2 3 10 2 5 10 1 10 0 10 -1 10 1 10 0 55 5 isfh600_05 ( v ce = 5.0 v ) i c /i f = f (i f ) i f (ma) i c /i f ( % ) 10 3 5 0 1 2 3 10 2 5 10 1 10 0 10 -1 10 1 10 0 55 5 isfh600_06 (t a = 50 ?c, i c /i f = f (i f ) i f (ma) i c /i f ( % )
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83662 590 rev. 1.6, 10-dec-08 sfh600 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 7 - current transfer ratio vs. diode current fig. 8 - current transfer ra tio (ctr) vs. temperature fig. 9 - transistor char acteristics sfh600-2, -3 fig. 10 - output characteristics sfh600-2, -3 fig. 11 - forward voltage fig. 12 - collector em itter off-state current 10 3 5 1 2 3 0 10 2 5 10 1 10 0 10 -1 10 1 10 0 55 5 isfh600_07 (t a = 75 ?c, v ce = 5.0 v ) i c /i f = f (l f ) dc p u ls b etrie b p u lse ohodo504 i c /i f ( % ) i f (ma) 10 3 5 ohodo501 10 2 10 1 - 25 75 25 050 5 t a (c) isfh600_0 8 (i f = 10 ma, v ce = 5.0 v ) i c /i f = f (t) 0 1 2 3 dc p u ls b etrie b p u lse i c /i f ( % ) 30 25 10 20 15 0 015 10 5 5 i c (ma) v ce ( v ) isfh600_09 i b = 10 a i b = 15 a i b = 20 a i b = 40 a i b = 30 a i b = 2 a i b = 5 a (i c = f ( v ce ) i f = 0 dc p u ls b etrie b p u lse ohodo497 40 30 10 20 0 015 10 5 v v ce isfh600_10 i f = 14 ma i f = 12 ma i f = 10 ma i f = 7 ma i f = 5 ma i f = 2 ma i f = 1 ma (i c = f ( v ce ) dc p u ls b etrie b p u lse ohodo49 8 i c 1.2 1.1 1.0 0.9 10 -1 10 1 10 2 5 55 10 0 v f ( v ) i f (ma) isfh600_11 v f = f (i f ) 25 c 50 c 75 c 10 0 10 -1 10 -2 10 -3 0 25 50 75 100 i ceo ( a) t a (c) isfh600_12 v ce = 12 v v ce = 35 v i ceo = f ( v ,t) (i f = 0)
document number: 83662 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 591 sfh600 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 13 - saturation voltage vs. collector current and modulation depth sfh600-0 fig. 14 - saturation voltage vs. collector current and modulation depth sfh600-1 fig. 15 - saturation voltage vs. collector current and modulation depth sfh600-2 fig. 16 - saturation voltage vs. collector current and modulation depth sfh600-3 fig. 17 - permissible pulse load fig. 18 - permissible power di ssipation for transistor and diode 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh600_13 i f = 3 x i c v cesa t = f (i c ) 0 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh600_14 i f = 2 x i c i f = 3 x i c v cesat = f (i c ) 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh600_15 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh600_16 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 0 10 1 10 2 v cesat ( v ) i c (ma) isfh600_16 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 0 50 100 150 200 0 50 100 75 25 p tot (m w ) t a (c) isfh600_1 8 p tot = f (t a ) transistor diode
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83662 592 rev. 1.6, 10-dec-08 sfh600 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 19 - permissible forward current diode fig. 20 - transistor capacitance package dimensions in inches (millimeters) 0 30 60 90 120 0 50 100 75 25 i f (ma) t a (c) isfh600_19 p tot = f (t a ) 0 6 4 2 12 10 8 1 8 16 14 24 20 10 -2 10 -1 10 0 10 1 10 2 c (pf) v e ( v ) isfh600_20 c = f ( v o ) (f = 1.0 mhz) c eb c cb c cf 22 i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ . 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0(4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
document number: 83662 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 593 sfh600 optocoupler, phototransistor output, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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